symbol v ds v gs i dm t j , t stg symbol typ max 70 90 100 125 r q jl 63 80 junction and storage temperature range a p d c 1.4 0.9 -55 to 150 t a =70c i d 3 2.5 16 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv 8 gate-source voltage drain-source voltage 20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja ao3438 20v n-channel mosfet product summary v ds = 20v i d = 3a (v gs = 4.5v) r ds(on) < 62m w (v gs = 4.5v) r ds(on) < 70m w (v gs = 2.5v) r ds(on) < 85m w (v gs = 1.8v) general description the ao3438 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in p wm applications. a g ds sot23 top view bottom view d g s g s d alpha & omega semiconductor, ltd.
ao3438 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.5 0.7 1 v i d(on) 16 a 51 62 t j =125c 68 85 58 70 m w 68 85 m w g fs 11 s v sd 0.7 1 v i s 2 a c iss 260 320 pf c oss 48 pf c rss 27 pf r g 3 4.5 w q g 2.9 3.8 nc q gs 0.4 nc q gd 0.6 nc t d(on) 2.5 ns t r 3.2 ns t d(off) 21 ns t f 3 ns t rr 14 19 ns q rr 3.8 nc 12 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =3.3 w , r gen =6 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =3a gate source charge m w v gs =2.5v, i d =2.8a i s =1a,v gs =0v v ds =5v, i d =3a v gs =1.8v, i d =2.5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =20v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =3a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =3a reverse transfer capacitance i f =3a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2: nov. 2010 alpha & omega semiconductor, ltd.
ao3438 typical electrical and thermal characteristics 12 0 4 8 12 16 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 0 4 8 12 16 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 40 60 80 100 120 0 3 6 9 12 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) v gs =1.8v v gs =2.5v v gs =4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =1.8v i d =2a v gs =4.5v i d =3a v gs =2.5v i d =2.8a 40 60 80 100 120 0 2 4 6 8 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) i d =3a 25c 125c alpha & omega semiconductor, ltd.
ao3438 typical electrical and thermal characteristics 12 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) z q qq q ja normalized transient thermal resistance v ds =10v i d =3a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1m s 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m 1s alpha & omega semiconductor, ltd.
|
